21nC @ 10V,Gate Charge (Qg) @ Vgs
8-PowerTDFN,Package / Case
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDMS86252L FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 150V 4.4A (Ta) 56 mOhm @ 4.4A, 10V 3V @ 250µA 21nC @ 10V 1335pF @ 75V 2.5W Surface Mount 8-PowerTDFN
BSC080N03LS G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 14A (Ta), 53A (Tc) 8 mOhm @ 30A, 10V 2.2V @ 250µA 21nC @ 10V 1700pF @ 15V 35W Surface Mount 8-PowerTDFN
BSZ088N03LS G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 30V 12A (Ta), 40A (Tc) 8.8 mOhm @ 20A, 10V 2.2V @ 250µA 21nC @ 10V 1700pF @ 15V 35W Surface Mount 8-PowerTDFN
BSC265N10LSF G INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 100V 6.5A (Ta), 40A (Tc) 26.5 mOhm @ 20A, 10V 2.4V @ 43µA 21nC @ 10V 1600pF @ 50V 78W Surface Mount 8-PowerTDFN
SIR770DP-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 30V 8A (Ta) 21 mOhm @ 8A, 10V 2.8V @ 250µA 21nC @ 10V 900pF @ 15V 3.6W Surface Mount 8-PowerTDFN