| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPD90N03S4L-02 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 90A (Tc) | 2.2 mOhm @ 90A, 10V | 2.2V @ 90µA | 140nC @ 10V | 9750pF @ 25V | 136W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| IPP80N03S4L-03 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 2.7 mOhm @ 80A, 10V | 2.2V @ 90µA | 140nC @ 10V | 9750pF @ 25V | 136W | Through Hole | TO-220-3 | |
| IPI80N03S4L-03 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 2.7 mOhm @ 80A, 10V | 2.2V @ 90µA | 140nC @ 10V | 9750pF @ 25V | 136W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| IPB80N03S4L-02 | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 30V | 80A (Tc) | 2.4 mOhm @ 80A, 10V | 2.2V @ 90µA | 140nC @ 10V | 9750pF @ 25V | 136W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| STP200NF03 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 30V | 120A (Tc) | 3.6 mOhm @ 60A, 10V | 4V @ 250µA | 140nC @ 10V | 4950pF @ 25V | 300W | Through Hole | TO-220-3 | |
| STB200NF03T4 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 30V | 120A (Tc) | 3.6 mOhm @ 60A, 10V | 4V @ 250µA | 140nC @ 10V | 4950pF @ 25V | 300W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| STV160NF03LT4 | STMICROELECTRONICS | MOSFET N-Channel, Metal Oxide | 30V | 160A (Tc) | 2.8 mOhm @ 80A, 10V | 1V @ 250µA | 140nC @ 10V | 4700pF @ 25V | 210W | Surface Mount | PowerSO-10 Exposed Bottom Pad | |
| SISS27DN-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 23A (Ta), 50A (Tc) | 5.6 mOhm @ 15A, 10V | 2.2V @ 250µA | 140nC @ 10V | 5250pF @ 15V | 4.8W | Surface Mount | 8-PowerVDFN |
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