MOSFET, N CH, 30V, 90A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:136W; Transistor Case Style:TO-252; No. of Pins:3; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Rds On (Max) @ Id, Vgs 2.2 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 90µA
Gate Charge (Qg) @ Vgs 140nC @ 10V
Input Capacitance (Ciss) @ Vds 9750pF @ 25V
Power - Max 136W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63