| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AON6435 | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET P-Channel, Metal Oxide | 30V | 12A (Ta), 34A (Tc) | 17 mOhm @ 20A, 10V | 3V @ 250µA | 21nC @ 10V | 1400pF @ 15V | 4.1W | Surface Mount | 8-PowerVDFN | |
| AOD413A | ALPHA & OMEGA SEMICONDUCTOR LTD | MOSFET P-Channel, Metal Oxide | 40V | 12A (Tc) | 44 mOhm @ 12A, 10V | 3V @ 250µA | 21nC @ 10V | 1125pF @ 20V | 2.5W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FDB86102LZ | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 100V | 8.3A (Ta), 30A (Tc) | 24 mOhm @ 8.3A, 10V | 3V @ 250µA | 21nC @ 10V | 1275pF @ 50V | 2W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FDFS2P106A | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 3A (Ta) | 110 mOhm @ 3A, 10V | 3V @ 250µA | 21nC @ 10V | 714pF @ 30V | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| FDS4897AC | FAIRCHILD SEMICONDUCTOR CORP | N and P-Channel | 40V | 6.1A, 5.2A | 26 mOhm @ 6.1A, 10V | 3V @ 250µA | 21nC @ 10V | 1055pF @ 20V | 900mW | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | |
| FDMS86252L | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 150V | 4.4A (Ta) | 56 mOhm @ 4.4A, 10V | 3V @ 250µA | 21nC @ 10V | 1335pF @ 75V | 2.5W | Surface Mount | 8-PowerTDFN | |
| FDMS8692 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 30V | 12A (Ta), 28A (Tc) | 9 mOhm @ 12A, 10V | 3V @ 250µA | 21nC @ 10V | 1265pF @ 15V | 2.5W | Surface Mount | 8-PQFN, Power56 | |
| IRF5804TR | INTERNATIONAL RECTIFIER CORP | MOSFET P-Channel, Metal Oxide | 40V | 2.5A (Ta) | 198 mOhm @ 2.5A, 10V | 3V @ 250µA | 21nC @ 10V | 680pF @ 25V | 2W | Surface Mount | 6-TSOP (0.059", 1.50mm Width) | |
| SI2343DS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 3.1A (Ta) | 53 mOhm @ 4A, 10V | 3V @ 250µA | 21nC @ 10V | 540pF @ 15V | 750mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2343DS-T1 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 30V | 3.1A (Tc) | 53 mOhm @ 4A, 10V | 3V @ 250µA | 21nC @ 10V | 540pF @ 15V | 750mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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