FET Type | MOSFET P-Channel, Metal Oxide |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) @ Vds | 714pF @ 30V |
Power - Max | 900mW |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |