20A,Current - Continuous Drain (Id) @ 25°C
-,Vgs(th) (Max) @ Id
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
GA20JT12-247 GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 1200V (1.2kV) 20A 70 mOhm @ 20A, 400mA - - - 5W Through Hole TO-247-3
FCPF20N60S FAIRCHILD SEMICONDUCTOR CORP
- 600V 20A - - - - - Through Hole -
FCPF20N60ST FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 600V 20A - - - - - Through Hole -
RJK2057DPA-00#J0 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 200V 20A 85 mOhm @ 10A, 10V - 19nC @ 10V 1250pF @ 25V 30W Surface Mount 8-WDFN Exposed Pad
H5N2522LSTL-E RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 250V 20A 180 mOhm @ 10A, 10V - 47nC @ 10V 1300pF @ 25V 75W Surface Mount SC-83
RJK0657DPA-00#J5A RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 60V 20A 13.6 mOhm @ 10A, 10V - 16nC @ 10V 1000pF @ 10V 45W Surface Mount 8-WFDFN Exposed Pad
RJK1560DPP-M0#T2 RENESAS ELECTRONICS CORP
MOSFET N-Channel, Metal Oxide 150V 20A 60 mOhm @ 10A, 4V - 52nC @ 4V 6720pF @ 25V 28.5W Through Hole TO-220-3 Full Pack