| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| C2M0080120D | CREE INC | SiCFET N-Channel, Silicon Carbide | 1200V (1.2kV) | 31.6A (Tc) | 98 mOhm @ 20A, 20V | 2.2V @ 1mA | 49.2nC @ 20V | 950pF @ 1000V | 208W | Through Hole | TO-247-3 |
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