| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK7Y29-40EX | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 40V | 26A (Ta) | 29 mOhm @ 5A, 10V | 4V @ 1mA | 7.9nC @ 10V | 492pF @ 25V | 37W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| 2SK4221 | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 500V | 26A (Ta) | 240 mOhm @ 13A, 10V | - | 87nC @ 10V | 2250pF @ 30V | 2.5W | Through Hole | TO-3P-3, SC-65-3 | |
| 2SK3820-DL-E | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 26A (Ta) | 60 mOhm @ 13A, 10V | 2.6V @ 1mA | 44nC @ 10V | 2150pF @ 20V | 1.65W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| 2SK3826 | ON SEMICONDUCTOR | MOSFET N-Channel, Metal Oxide | 100V | 26A (Ta) | 60 mOhm @ 13A, 10V | 2.6V @ 1mA | 42nC @ 10V | 2150pF @ 20V | 1.75W | Through Hole | TO-220-3 | |
| TPCC8005-H(TE12LQM | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 30V | 26A (Ta) | 6.4 mOhm @ 13A, 10V | 2.3V @ 500µA | 35nC @ 10V | 2900pF @ 10V | 30W | Surface Mount | 8-VDFN Exposed Pad | |
| SUD50N025-09BP-E3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 25V | 26A (Ta) | 8.6 mOhm @ 26A, 10V | 2.4V @ 250µA | 57nC @ 10V | 2020pF @ 12V | 10W | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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