Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 26A (Ta)
Rds On (Max) @ Id, Vgs 240 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) @ Vds 2250pF @ 30V
Power - Max 2.5W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3