20V,Drain to Source Voltage (Vdss)
2.9A (Ta),Current - Continuous Drain (Id) @ 25°C
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
AO3435 ALPHA & OMEGA SEMICONDUCTOR LTD
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 70 mOhm @ 3.5A, 4.5V 1V @ 250µA 11nC @ 4.5V 745pF @ 10V 1W Surface Mount TO-236-3, SC-59, SOT-23-3
DMS2120LFWB-7 DIODES INC
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 95 mOhm @ 2.8A, 4.5V 1.3V @ 250µA - 632pF @ 10V 1.5W Surface Mount 8-VDFN Exposed Pad
DMS2220LFW-7 DIODES INC
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 95 mOhm @ 2.8A, 4.5V 1.3V @ 250µA - 632pF @ 10V 1.5W Surface Mount 8-VDFN Exposed Pad
FDFMJ2P023Z FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 112 mOhm @ 2.9A, 4.5V 1V @ 250µA 6.5nC @ 4.5V 400pF @ 10V 700mW Surface Mount 6-WDFN Exposed Pad
SI1410EDH-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 20V 2.9A (Ta) 70 mOhm @ 3.7A, 4.5V 450mV @ 250µA 8nC @ 4.5V - 1W Surface Mount 6-TSSOP, SC-88, SOT-363
SI2321DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 57 mOhm @ 3.3A, 4.5V 900mV @ 250µA 13nC @ 4.5V 715pF @ 6V 710mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI2321DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.9A (Ta) 57 mOhm @ 3.3A, 4.5V 900mV @ 250µA 13nC @ 4.5V 715pF @ 6V 710mW Surface Mount TO-236-3, SC-59, SOT-23-3