Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.9A (Ta)
Rds On (Max) @ Id, Vgs 95 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 250µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 632pF @ 10V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad