N and P-Channel,FET Type
2.6A, 2.3A,Current - Continuous Drain (Id) @ 25°C
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTLJD3119CTBG ON SEMICONDUCTOR
N and P-Channel 20V 2.6A, 2.3A 65 mOhm @ 3.8A, 4.5V 1V @ 250µA 3.7nC @ 4.5V 271pF @ 10V 710mW Surface Mount 6-WDFN Exposed Pad
NTLJD3119CTAG ON SEMICONDUCTOR
N and P-Channel 20V 2.6A, 2.3A 65 mOhm @ 3.8A, 4.5V 1V @ 250µA 3.7nC @ 4.5V 271pF @ 10V 710mW Surface Mount 6-WDFN Exposed Pad