Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.6A, 2.3A
Rds On (Max) @ Id, Vgs 65 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 3.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 271pF @ 10V
Power - Max 710mW
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad