2.45A (Ta),Current - Continuous Drain (Id) @ 25°C
90 mOhm @ 3.3A, 4.5V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI3441BDV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.45A (Ta) 90 mOhm @ 3.3A, 4.5V 850mV @ 250µA 8nC @ 4.5V - 860mW Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3441BDV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 20V 2.45A (Ta) 90 mOhm @ 3.3A, 4.5V 850mV @ 250µA 8nC @ 4.5V - 860mW Surface Mount 6-TSOP (0.065", 1.65mm Width)