Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.45A (Ta)
Rds On (Max) @ Id, Vgs 90 mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) @ Vgs 8nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 860mW
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)