190mA (Ta),Current - Continuous Drain (Id) @ 25°C
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
BSS192PE6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 250V 190mA (Ta) 12 Ohm @ 190mA, 10V 2V @ 130µA 6.1nC @ 10V 104pF @ 25V 1W Surface Mount TO-243AA
BSS192PE6327T INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 250V 190mA (Ta) 12 Ohm @ 190mA, 10V 2V @ 130µA 6.1nC @ 10V 104pF @ 25V 1W Surface Mount TO-243AA
BSP300 E6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSP300 L6327 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 800V 190mA (Ta) 20 Ohm @ 190mA, 10V 4V @ 1mA - 230pF @ 25V 1.8W Surface Mount TO-261-4, TO-261AA
BSS192P L6327 INFINEON TECHNOLOGIES AG
MOSFET P-Channel, Metal Oxide 250V 190mA (Ta) 12 Ohm @ 190mA, 10V 2V @ 130µA 6.1nC @ 10V 104pF @ 25V 1W Surface Mount TO-243AA
NX7002AKAR NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 190mA (Ta) 4.5 Ohm @ 100mA, 10V 2.1V @ 250µA 0.43nC @ 4.5V 17pF @ 10V 265mW Surface Mount TO-236-3, SC-59, SOT-23-3
NX7002AK,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 60V 190mA (Ta) 4.5 Ohm @ 100mA, 10V 2.1V @ 250µA 0.43nC @ 4.5V 17pF @ 10V 265mW Surface Mount TO-236-3, SC-59, SOT-23-3
BST82,235 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 190mA (Ta) 10 Ohm @ 150mA, 5V 2V @ 1mA - 40pF @ 10V 830mW Surface Mount TO-236-3, SC-59, SOT-23-3
BST82,215 NXP SEMICONDUCTORS
MOSFET N-Channel, Metal Oxide 100V 190mA (Ta) 10 Ohm @ 150mA, 5V 2V @ 1mA - 40pF @ 10V 830mW Surface Mount TO-236-3, SC-59, SOT-23-3
SI1021R-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 190mA (Ta) 4 Ohm @ 500mA, 10V 3V @ 250µA 1.7nC @ 15V 23pF @ 25V 250mW Surface Mount SC-75A