Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 190mA (Ta)
Rds On (Max) @ Id, Vgs 4.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) @ Vgs 0.43nC @ 4.5V
Input Capacitance (Ciss) @ Vds 17pF @ 10V
Power - Max 265mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3