MOSFET P-Channel, Metal Oxide,FET Type
185mA (Ta),Current - Continuous Drain (Id) @ 25°C
3 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TP0610K-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 185mA (Ta) 6 Ohm @ 500mA, 10V 3V @ 250µA 1.7nC @ 15V 23pF @ 25V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
TP0610K-T1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 185mA (Ta) 6 Ohm @ 500mA, 10V 3V @ 250µA 1.7nC @ 15V 23pF @ 25V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3
TP0610K-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 60V 185mA (Ta) 6 Ohm @ 500mA, 10V 3V @ 250µA 1.7nC @ 15V 23pF @ 25V 350mW Surface Mount TO-236-3, SC-59, SOT-23-3