Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 185mA (Ta)
Rds On (Max) @ Id, Vgs 6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 1.7nC @ 15V
Input Capacitance (Ciss) @ Vds 23pF @ 25V
Power - Max 350mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3