MOSFET P-Channel, Metal Oxide,FET Type
13A (Ta),Current - Continuous Drain (Id) @ 25°C
16 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
DMP3015LSS-13 DIODES INC
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 11 mOhm @ 13A, 10V 2V @ 250µA 60.4nC @ 10V 2748pF @ 20V 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDS6679 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 9 mOhm @ 13A, 10V 3V @ 250µA 100nC @ 10V 3939pF @ 15V 1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDS6679AZ FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 9.3 mOhm @ 13A, 10V 3V @ 250µA 96nC @ 10V 3845pF @ 15V 1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDS6679Z FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 9 mOhm @ 13A, 10V 3V @ 250µA 94nC @ 10V 3803pF @ 15V 1W Surface Mount 8-SOIC (0.154", 3.90mm Width)
FDZ206P FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 20V 13A (Ta) 9.5 mOhm @ 13A, 4.5V 1.5V @ 250µA 53nC @ 4.5V 4280pF @ 10V 2.2W Surface Mount 30-WFBGA
UPA2810T1L-E1-AY RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 12 mOhm @ 13A, 10V 2.5V @ 1mA 40nC @ 10V 1860pF @ 10V 1.5W Surface Mount 8-VDFN Exposed Pad
UPA2810T1L-E2-AY RENESAS ELECTRONICS CORP
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 12 mOhm @ 13A, 10V 2.5V @ 1mA 40nC @ 10V 1860pF @ 10V 1.5W Surface Mount 8-VDFN Exposed Pad
RSD130P10TL ROHM CO LTD
MOSFET P-Channel, Metal Oxide 100V 13A (Ta) - - - - 20W Surface Mount SOT-428
TPC8118(TE12L,Q,M) TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 7 mOhm @ 6.5A, 10V 2V @ 1mA 65nC @ 10V 2700pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)
TPC8127,LQ(M TOSHIBA CORP
MOSFET P-Channel, Metal Oxide 30V 13A (Ta) 6.5 mOhm @ 6.5A, 10V 2V @ 500µA 92nC @ 10V 3800pF @ 10V - Surface Mount 8-SOIC (0.173", 4.40mm Width)