MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):7.3mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Max:175°C;
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Rds On (Max) @ Id, Vgs 9 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) @ Vds 3939pF @ 15V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 951.6
10
-
INR 768.6
100
-
INR 616.1
500
-
INR 538.02
1000
-
INR 461.16
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 951.6
Buying Option 2
1
-
INR 951.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 951.6