12.2A (Tc),Current - Continuous Drain (Id) @ 25°C
31 mOhm @ 1A, 4.5V,Rds On (Max) @ Id, Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI8424DB-T1-E1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 12.2A (Tc) 31 mOhm @ 1A, 4.5V 1V @ 250µA 33nC @ 5V 1950pF @ 4V 6.25W Surface Mount 4-XFBGA, CSPBGA
SI8404DB-T1-E1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 12.2A (Tc) 31 mOhm @ 1A, 4.5V 1V @ 250µA 33nC @ 5V 1950pF @ 4V 6.25W Surface Mount 4-XFBGA, CSPBGA