11A (Ta),Current - Continuous Drain (Id) @ 25°C
-,Input Capacitance (Ciss) @ Vds
24 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4866DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 12V 11A (Ta) 5.5 mOhm @ 17A, 4.5V 600mV @ 250µA 30nC @ 4.5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4890DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 12 mOhm @ 11A, 10V 800mV @ 250µA 20nC @ 5V - 2.5W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4888DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 7 mOhm @ 16A, 10V 1.6V @ 250µA 24nC @ 5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4860DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 8 mOhm @ 16A, 10V 1V @ 250µA 18nC @ 4.5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4386DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 7 mOhm @ 16A, 10V 2.5V @ 250µA 18nC @ 4.5V - 1.47W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4386DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 7 mOhm @ 16A, 10V 2.5V @ 250µA 18nC @ 4.5V - 1.47W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI7384DP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 8.5 mOhm @ 18A, 10V 3V @ 250µA 18nC @ 4.5V - 1.8W Surface Mount PowerPAK® SO-8
SI7840BDP-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 8.5 mOhm @ 16.5A, 10V 3V @ 250µA 21nC @ 4.5V - 1.8W Surface Mount PowerPAK® SO-8
SI7840BDP-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 30V 11A (Ta) 8.5 mOhm @ 16.5A, 10V 3V @ 250µA 21nC @ 4.5V - 1.8W Surface Mount PowerPAK® SO-8
SI4866DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 12V 11A (Ta) 5.5 mOhm @ 17A, 4.5V 600mV @ 250µA 30nC @ 4.5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)