Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Rds On (Max) @ Id, Vgs 5.5 mOhm @ 17A, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA
Gate Charge (Qg) @ Vgs 30nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.6W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)