11A (Ta),Current - Continuous Drain (Id) @ 25°C
30nC @ 4.5V,Gate Charge (Qg) @ Vgs
2 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI4866DY-T1-E3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 12V 11A (Ta) 5.5 mOhm @ 17A, 4.5V 600mV @ 250µA 30nC @ 4.5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)
SI4866DY-T1-GE3 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 12V 11A (Ta) 5.5 mOhm @ 17A, 4.5V 600mV @ 250µA 30nC @ 4.5V - 1.6W Surface Mount 8-SOIC (0.154", 3.90mm Width)