11.5A (Ta),Current - Continuous Drain (Id) @ 25°C
3.7V @ 600µA,Vgs(th) (Max) @ Id
5 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TK12P60W,RVQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 11.5A (Ta) 340 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 100W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
TK12E60W,S1VX TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 110W Through Hole TO-220-3
TK12A60W,S4VX TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 35W Through Hole TO-220-3 Full Pack
TK12V60W,LVQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 104W Surface Mount 4-VSFN Exposed Pad
TK12Q60W,S1VQ TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 600V 11.5A (Ta) 340 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 100W Through Hole TO-251-3 Stub Leads, IPak