Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Rds On (Max) @ Id, Vgs 300 mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 3.7V @ 600µA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 890pF @ 300V
Power - Max 104W
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad