| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQA11N90_F109 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 900V | 11.4A (Tc) | 960 mOhm @ 5.7A, 10V | 5V @ 250µA | 94nC @ 10V | 3500pF @ 25V | 300W | Through Hole | TO-3P-3, SC-65-3 | |
| FQP11P06 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 11.4A (Tc) | 175 mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | 53W | Through Hole | TO-220-3 | |
| FQI11P06TU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET P-Channel, Metal Oxide | 60V | 11.4A (Tc) | 175 mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | 3.13W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| FQAF16N25C | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 250V | 11.4A (Tc) | 270 mOhm @ 5.7A, 10V | 4V @ 250µA | 53.5nC @ 10V | 1080pF @ 25V | 73W | Through Hole | SC-94 | |
| FQP11N40 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 400V | 11.4A (Tc) | 480 mOhm @ 5.7A, 10V | 5V @ 250µA | 35nC @ 10V | 1400pF @ 25V | 147W | Through Hole | TO-220-3 | |
| FQB11N40TM | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 400V | 11.4A (Tc) | 480 mOhm @ 5.7A, 10V | 5V @ 250µA | 35nC @ 10V | 1400pF @ 25V | 3.13W | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| FQI11N40TU | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 400V | 11.4A (Tc) | 480 mOhm @ 5.7A, 10V | 5V @ 250µA | 35nC @ 10V | 1400pF @ 25V | 3.13W | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| FQAF14N30 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 300V | 11.4A (Tc) | 290 mOhm @ 5.7A, 10V | 5V @ 250µA | 40nC @ 10V | 1360pF @ 25V | 90W | Through Hole | SC-94 | |
| FQA11N90 | FAIRCHILD SEMICONDUCTOR CORP | MOSFET N-Channel, Metal Oxide | 900V | 11.4A (Tc) | 960 mOhm @ 5.7A, 10V | 5V @ 250µA | 94nC @ 10V | 3500pF @ 25V | 300W | Through Hole | TO-3P-3, SC-65-3 | |
| IPW65R310CFD | INFINEON TECHNOLOGIES AG | MOSFET N-Channel, Metal Oxide | 650V | 11.4A (Tc) | 310 mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | 1100pF @ 100V | 104.2W | Through Hole | TO-247-3 |
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