Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Rds On (Max) @ Id, Vgs 175 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) @ Vds 550pF @ 25V
Power - Max 3.13W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA