8V,Drain to Source Voltage (Vdss)
1.1W,Power - Max
Surface Mount,Mounting Type
13 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTHD5905T1 ON SEMICONDUCTOR
2 P-Channel (Dual) 8V 3A 90 mOhm @ 3A, 4.5V 450mV @ 250µA 9nC @ 4.5V - 1.1W Surface Mount 8-SMD, Flat Lead
NTHD2102PT1 ON SEMICONDUCTOR
2 P-Channel (Dual) 8V 3.4A 58 mOhm @ 3.4A, 4.5V 1.5V @ 250µA 16nC @ 2.5V 715pF @ 6.4V 1.1W Surface Mount 8-SMD, Flat Lead
NTHD2102PT1G ON SEMICONDUCTOR
2 P-Channel (Dual) 8V 3.4A 58 mOhm @ 3.4A, 4.5V 1.5V @ 250µA 16nC @ 2.5V 715pF @ 6.4V 1.1W Surface Mount 8-SMD, Flat Lead
SI3445ADV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 4.4A (Ta) 42 mOhm @ 5.8A, 4.5V 1V @ 250µA 19nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI8424CDB-T1-E1 VISHAY SILICONIX
MOSFET N-Channel, Metal Oxide 8V 6.3A (Ta), 10A (Tc) 20 mOhm @ 2A, 4.5V 800mV @ 250µA 40nC @ 4.5V 2340pF @ 4V 1.1W Surface Mount 4-UFBGA, WLCSP
SI3499DV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 5.3A (Ta) 23 mOhm @ 7A, 4.5V 750mV @ 250µA 42nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3445ADV-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 4.4A (Ta) 42 mOhm @ 5.8A, 4.5V 1V @ 250µA 19nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI3499DV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 5.3A (Ta) 23 mOhm @ 7A, 4.5V 750mV @ 250µA 42nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SIB914DK-T1-GE3 VISHAY SILICONIX
2 N-Channel (Dual) 8V 1.5A 113 mOhm @ 2.5A, 4.5V 800mV @ 250µA 2.6nC @ 5V 125pF @ 4V 1.1W Surface Mount PowerPAK® SC-75-6L Dual
SI5905DC-T1-E3 VISHAY SILICONIX
2 P-Channel (Dual) 8V 3A 90 mOhm @ 3A, 4.5V 450mV @ 250µA 9nC @ 4.5V - 1.1W Surface Mount 8-SMD, Flat Lead