Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Rds On (Max) @ Id, Vgs 23 mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 750mV @ 250µA
Gate Charge (Qg) @ Vgs 42nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.1W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.065", 1.65mm Width)