8V,Drain to Source Voltage (Vdss)
-,Input Capacitance (Ciss) @ Vds
41 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTJD1155LT1G ON SEMICONDUCTOR
N and P-Channel 8V 1.3A 175 mOhm @ 1.2A, 4.5V 1V @ 250µA - - 400mW Surface Mount 6-TSSOP, SC-88, SOT-363
NTHS5445T1 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 8V 5.2A (Ta) 35 mOhm @ 5.2A, 4.5V 450mV @ 250µA 26nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
NTHD5905T1 ON SEMICONDUCTOR
2 P-Channel (Dual) 8V 3A 90 mOhm @ 3A, 4.5V 450mV @ 250µA 9nC @ 4.5V - 1.1W Surface Mount 8-SMD, Flat Lead
NTJD1155LT1 ON SEMICONDUCTOR
N and P-Channel 8V 1.3A 175 mOhm @ 1.2A, 4.5V 1V @ 250µA - - 400mW Surface Mount 6-TSSOP, SC-88, SOT-363
NTLJD2105LTBG ON SEMICONDUCTOR
N and P-Channel 8V 2.5A 50 mOhm @ 4A, 4.5V 1V @ 250µA - - 520mW Surface Mount 6-WDFN Exposed Pad
SI1305DL-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1405DL-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 1.6A (Ta) 125 mOhm @ 1.8A, 4.5V 450mV @ 250µA 7nC @ 4.5V - 568mW Surface Mount 6-TSSOP, SC-88, SOT-363
SI3445ADV-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 4.4A (Ta) 42 mOhm @ 5.8A, 4.5V 1V @ 250µA 19nC @ 4.5V - 1.1W Surface Mount 6-TSOP (0.065", 1.65mm Width)
SI5445BDC-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 5.2A (Ta) 33 mOhm @ 5.2A, 4.5V 1V @ 250µA 21nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
SI8439DB-T1-E1 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 5.9A (Ta), 9.2A (Tc) 25 mOhm @ 1.5A, 4.5V 800mV @ 250µA 50nC @ 4.5V - - Surface Mount 4-UFBGA