Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta)
Rds On (Max) @ Id, Vgs 35 mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 1.3W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead