8V,Drain to Source Voltage (Vdss)
450mV @ 250µA,Vgs(th) (Max) @ Id
23 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTHS5445T1 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 8V 5.2A (Ta) 35 mOhm @ 5.2A, 4.5V 450mV @ 250µA 26nC @ 4.5V - 1.3W Surface Mount 8-SMD, Flat Lead
NTHD5905T1 ON SEMICONDUCTOR
2 P-Channel (Dual) 8V 3A 90 mOhm @ 3A, 4.5V 450mV @ 250µA 9nC @ 4.5V - 1.1W Surface Mount 8-SMD, Flat Lead
SI1305DL-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1405DL-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 1.6A (Ta) 125 mOhm @ 1.8A, 4.5V 450mV @ 250µA 7nC @ 4.5V - 568mW Surface Mount 6-TSSOP, SC-88, SOT-363
SI1405DL-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 1.6A (Ta) 125 mOhm @ 1.8A, 4.5V 450mV @ 250µA 7nC @ 4.5V - 568mW Surface Mount 6-TSSOP, SC-88, SOT-363
SI6469DQ-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 6A (Ta) 28 mOhm @ 6A, 4.5V 450mV @ 250µA 40nC @ 4.5V - - Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI6469DQ-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 6A (Ta) 28 mOhm @ 6A, 4.5V 450mV @ 250µA 40nC @ 4.5V - - Surface Mount 8-TSSOP (0.173", 4.40mm Width)
SI1305DL-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1305EDL-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1305EDL-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323