| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| NTR2101PT1G | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 8V | 3.7A | 52 mOhm @ 3.5A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 1173pF @ 4V | 960mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| NTR2101PT1 | ON SEMICONDUCTOR | MOSFET P-Channel, Metal Oxide | 8V | - | 52 mOhm @ 3.5A, 4.5V | 1V @ 250µA | 15nC @ 4.5V | 1173pF @ 4V | 960mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2305DS-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 3.5A (Ta) | 52 mOhm @ 3.5A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 1245pF @ 4V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2305ADS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 5.4A (Tc) | 40 mOhm @ 4.1A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 740pF @ 4V | 1.7W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2305ADS-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 4.1A (Ta), 5.4A (Tc) | 40 mOhm @ 4.1A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 740pF @ 4V | 1.7W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2305CDS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 4.4A (Ta), 5.8A (Tc) | 35 mOhm @ 4.4A, 4.5V | 1V @ 250µA | 30nC @ 8V | 960pF @ 4V | 1.7W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2342DS-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 8V | 6A (Ta) | 17 mOhm @ 7.2A, 4.5V | 800mV @ 250µA | 15.8nC @ 4.5V | 1070pF @ 4V | 1.3W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2329DS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 5.3A (Ta) | 30 mOhm @ 5.3A, 4.5V | 800mV @ 250µA | 29nC @ 4.5V | 1485pF @ 4V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2305DS-T1-GE3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 3.5A (Ta) | 52 mOhm @ 3.5A, 4.5V | 800mV @ 250µA | 15nC @ 4.5V | 1245pF @ 4V | 1.25W | Surface Mount | TO-236-3, SC-59, SOT-23-3 | |
| SI2311DS-T1-E3 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 3A (Ta) | 45 mOhm @ 3.5A, 4.5V | 800mV @ 250µA | 12nC @ 4.5V | 970pF @ 4V | 710mW | Surface Mount | TO-236-3, SC-59, SOT-23-3 |
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