Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs 40 mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 4.5V
Input Capacitance (Ciss) @ Vds 740pF @ 4V
Power - Max 1.7W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3