8V,Drain to Source Voltage (Vdss)
SC-70, SOT-323,Package / Case
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
NTS2101PT1G ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 8V 1.4A (Ta) 100 mOhm @ 1A, 4.5V 700mV @ 250µA 6.4nC @ 5V 640pF @ 8V 290mW Surface Mount SC-70, SOT-323
NTS2101PT1 ON SEMICONDUCTOR
MOSFET P-Channel, Metal Oxide 8V 1.4A (Ta) 100 mOhm @ 1A, 4.5V 700mV @ 250µA 6.4nC @ 5V 640pF @ 8V 290mW Surface Mount SC-70, SOT-323
SI1305DL-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1315DL-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 900mA (Tc) 336 mOhm @ 800mA, 4.5V 800mV @ 250µA 3.4nC @ 4.5V 112pF @ 4V 400mW Surface Mount SC-70, SOT-323
SI1305DL-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1305EDL-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323
SI1305EDL-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 8V 860mA (Ta) 280 mOhm @ 1A, 4.5V 450mV @ 250µA 4nC @ 4.5V - 290mW Surface Mount SC-70, SOT-323