MOSFET, P CH, W/D, 8V, 0.9A, SOT323; Transistor Polarity:P Channel; Continuous Drain Current Id:-900mA; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.280ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-400mV; Power Dissipation Pd:400mW; Transistor Case Style:SOT-323; No. of Pins:3
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 900mA (Tc)
Rds On (Max) @ Id, Vgs 336 mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) @ Vgs 3.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 112pF @ 4V
Power - Max 400mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323