Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|
SI8469DB-T2-E1 | VISHAY SILICONIX | MOSFET P-Channel, Metal Oxide | 8V | 3.6A (Ta) | 64 mOhm @ 1.5A, 4.5V | 800mV @ 250µA | 17nC @ 4.5V | 900pF @ 4V | 780mW | Surface Mount | 6-UFBGA | |
SI8416DB-T2-E1 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 8V | 9.3A (Ta) | 23 mOhm @ 1.5A, 4.5V | 800mV @ 250µA | 26nC @ 4.5V | 1470pF @ 4V | 277W | Surface Mount | 6-UFBGA | |
SI8416DB-T1-GE3 | VISHAY SILICONIX | MOSFET N-Channel, Metal Oxide | 8V | 9.3A (Ta), 16A (Tc) | 23 mOhm @ 1.5A, 4.5V | 800mV @ 250µA | 26nC @ 4.5V | 1470pF @ 4V | 13W | Surface Mount | 6-UFBGA |