Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta)
Rds On (Max) @ Id, Vgs 64 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) @ Vgs 17nC @ 4.5V
Input Capacitance (Ciss) @ Vds 900pF @ 4V
Power - Max 780mW
Mounting Type Surface Mount
Package / Case 6-UFBGA