80V,Drain to Source Voltage (Vdss)
50nC @ 10V,Gate Charge (Qg) @ Vgs
11 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
CSD19501KCS TEXAS INSTRUMENTS INC
MOSFET N-Channel, Metal Oxide 80V 100A (Ta) 6.6 mOhm @ 60A, 10V 3.2V @ 250µA 50nC @ 10V 3980pF @ 40V 217W Through Hole TO-220-3
FQPF44N08 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 80V 25A (Tc) 34 mOhm @ 12.5A, 10V 4V @ 250µA 50nC @ 10V 1430pF @ 25V 41W Through Hole TO-220-3 Full Pack
FQPF44N08T FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 80V 25A (Tc) 34 mOhm @ 12.5A, 10V 4V @ 250µA 50nC @ 10V 1430pF @ 25V 41W Through Hole TO-220-3 Full Pack
FQP44N08 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 80V 44A (Tc) 34 mOhm @ 22A, 10V 4V @ 250µA 50nC @ 10V 1430pF @ 25V 127W Through Hole TO-220-3
FQAF44N08 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 80V 35.6A (Tc) 34 mOhm @ 17.8A, 10V 4V @ 250µA 50nC @ 10V 1430pF @ 25V 83W Through Hole SC-94
FQA44N08 FAIRCHILD SEMICONDUCTOR CORP
MOSFET N-Channel, Metal Oxide 80V 49.8A (Tc) 34 mOhm @ 24.9A, 10V 4V @ 250µA 50nC @ 10V 1430pF @ 25V 163W Through Hole TO-3P-3, SC-65-3
IRF6646TR1PBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 2.8W Surface Mount -
IRF6646TRPBF INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 2.8W Surface Mount -
IRF6646TR1 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 2.8W Surface Mount -
IRF6646 INTERNATIONAL RECTIFIER CORP
MOSFET N-Channel, Metal Oxide 80V 12A (Ta), 68A (Tc) 9.5 mOhm @ 12A, 10V 4.9V @ 150µA 50nC @ 10V 2060pF @ 25V 2.8W Surface Mount -