MOSFET, N, DIRECTFET, MN; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:80V; On Resistance Rds(on):7.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V; Power Dissipation Pd:2.8W; Transistor Case Style:DirectFET MN; No. of Pins:7; Operating Tem
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs 9.5 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 150µA
Gate Charge (Qg) @ Vgs 50nC @ 10V
Input Capacitance (Ciss) @ Vds 2060pF @ 25V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -