| Part Numbers | Manufacturer Name | Datasheet | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) @ Vgs | Input Capacitance (Ciss) @ Vds | Power - Max | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSD19501KCS | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 80V | 100A (Ta) | 6.6 mOhm @ 60A, 10V | 3.2V @ 250µA | 50nC @ 10V | 3980pF @ 40V | 217W | Through Hole | TO-220-3 | |
| CSD19503KCS | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 80V | 100A (Ta) | 9.2 mOhm @ 60A, 10V | 3.4V @ 250µA | 36nC @ 10V | 2730pF @ 40V | 188W | Through Hole | TO-220-3 | |
| BUK9Y8R5-80EX | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 80V | 100A (Ta) | 8 mOhm @ 25A, 10V | 2.1V @ 1mA | 54.7nC @ 5V | 8167pF @ 25V | 238W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| BUK7Y7R8-80EX | NXP SEMICONDUCTORS | MOSFET N-Channel, Metal Oxide | 80V | 100A (Ta) | 7.8 mOhm @ 25A, 10V | 4V @ 1mA | 63.3nC @ 10V | 5347pF @ 25V | 238W | Surface Mount | SC-100, SOT-669, 4-LFPAK | |
| CSD19502Q5B | TEXAS INSTRUMENTS INC | MOSFET N-Channel, Metal Oxide | 80V | 100A (Ta) | 4.1 mOhm @ 19A, 10V | 3.3V @ 250µA | 62nC @ 10V | 4870pF @ 40V | 3.2W | Surface Mount | 8-TDFN Exposed Pad | |
| TK100E08N1,S1X | TOSHIBA CORP | MOSFET N-Channel, Metal Oxide | 80V | 100A (Ta) | 3.2 mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | 9000pF @ 40V | 255W | Through Hole | TO-220-3 |
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