MOSFET, N CHANNEL, 80V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0034ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:3.2W; Transistor Case Style:VSON; No. of Pins:8; Operat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 3.3V @ 250µA
Gate Charge (Qg) @ Vgs 62nC @ 10V
Input Capacitance (Ciss) @ Vds 4870pF @ 40V
Power - Max 3.2W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad