MOSFET P-Channel, Metal Oxide,FET Type
80V,Drain to Source Voltage (Vdss)
15 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
FDC3535 FAIRCHILD SEMICONDUCTOR CORP
MOSFET P-Channel, Metal Oxide 80V 2.1A (Ta) 183 mOhm @ 2.1A, 10V 3V @ 250µA 20nC @ 10V 880pF @ 40V 700mW Surface Mount SOT-23-6 Thin, TSOT-23-6
SUD50P08-25L-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 50A (Tc) 25.2 mOhm @ 12.5A, 10V 3V @ 250µA 160nC @ 10V 4700pF @ 40V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SI7469DP-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 28A (Tc) 25 mOhm @ 10.2A, 10V 3V @ 250µA 160nC @ 10V 4700pF @ 40V 83W Surface Mount PowerPAK® SO-8
SI7469DP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 28A (Tc) 25 mOhm @ 10.2A, 10V 3V @ 250µA 160nC @ 10V 4700pF @ 40V 83W Surface Mount PowerPAK® SO-8
SI2337DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 2.2A (Tc) 270 mOhm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 500pF @ 40V 2.5W Surface Mount TO-236-3, SC-59, SOT-23-3
SI7455DP-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 10.5A (Ta), 28A (Tc) 25 mOhm @ 10.5A, 10V 4V @ 250µA 155nC @ 10V 5160pF @ 40V 83.3W Surface Mount PowerPAK® SO-8
SI7455DP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 10.5A (Ta), 28A (Tc) 25 mOhm @ 10.5A, 10V 4V @ 250µA 155nC @ 10V 5160pF @ 40V 83.3W Surface Mount PowerPAK® SO-8
SQJ469EP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 32A (Tc) 25 mOhm @ 10.2A, 10V 2.5V @ 250µA 155nC @ 10V 5100pF @ 40V 100W Surface Mount PowerPAK® SO-8
VP0808B VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 880mA (Ta) 5 Ohm @ 1A, 10V 4.5V @ 1mA - 150pF @ 25V 6.25W - -
VP0808B-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 880mA (Ta) 5 Ohm @ 1A, 10V 4.5V @ 1mA - 150pF @ 25V 6.25W - -