MOSFET P-Channel, Metal Oxide,FET Type
80V,Drain to Source Voltage (Vdss)
4V @ 250µA,Vgs(th) (Max) @ Id
7 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
SI2337DS-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 2.2A (Tc) 270 mOhm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 500pF @ 40V 2.5W Surface Mount TO-236-3, SC-59, SOT-23-3
SI7455DP-T1-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 10.5A (Ta), 28A (Tc) 25 mOhm @ 10.5A, 10V 4V @ 250µA 155nC @ 10V 5160pF @ 40V 83.3W Surface Mount PowerPAK® SO-8
SI7455DP-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 10.5A (Ta), 28A (Tc) 25 mOhm @ 10.5A, 10V 4V @ 250µA 155nC @ 10V 5160pF @ 40V 83.3W Surface Mount PowerPAK® SO-8
SUM110P08-11L-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 110A (Tc) 11.2 mOhm @ 20A, 10V 4V @ 250µA 270nC @ 10V 10850pF @ 40V 375W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUD50P08-26-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 50A (Tc) 26 mOhm @ 12.9A, 10V 4V @ 250µA 155nC @ 10V 5160pF @ 40V 136W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
SUM110P08-11-E3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 110A (Tc) 11.1 mOhm @ 20A, 10V 4V @ 250µA 280nC @ 10V 11500pF @ 40V 375W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SI2337DS-T1-GE3 VISHAY SILICONIX
MOSFET P-Channel, Metal Oxide 80V 1.2A (Ta), 2.2A (Tc) 270 mOhm @ 1.2A, 10V 4V @ 250µA 17nC @ 10V 500pF @ 40V 2.5W Surface Mount TO-236-3, SC-59, SOT-23-3