650V,Drain to Source Voltage (Vdss)
130W,Power - Max
8 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
STI20N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 18A (Tc) 190 mOhm @ 9A, 10V 5V @ 250µA 36nC @ 10V 1434pF @ 100V 130W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
STP20N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 18A (Tc) 190 mOhm @ 9A, 10V 5V @ 250µA 45nC @ 10V 1345pF @ 100V 130W Through Hole TO-220-3
STW20N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 18A (Tc) 190 mOhm @ 9A, 10V 5V @ 250µA 45nC @ 10V 1345pF @ 100V 130W Through Hole TO-247-3
STB20N65M5 STMICROELECTRONICS
MOSFET N-Channel, Metal Oxide 650V 18A (Tc) 190 mOhm @ 9A, 10V 5V @ 250µA 36nC @ 10V 1434pF @ 100V 130W Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TK14E65W,S1X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) 250 mOhm @ 6.9A, 10V 3.5V @ 690µA 35nC @ 10V 1300pF @ 300V 130W Through Hole TO-220-3
TK14N65W,S1F TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) 250 mOhm @ 6.9A, 10V 3.5V @ 690µA 35nC @ 10V 1300pF @ 300V 130W Through Hole TO-247-3
TK14C65W,S1Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) 250 mOhm @ 6.9A, 10V 3.5V @ 690µA 35nC @ 10V 1300pF @ 300V 130W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
TK14C65W5,S1Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) - - 40nC @ 10V 1300pF @ 300V 130W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA