Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 13.7A (Ta)
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) @ Vds 1300pF @ 300V
Power - Max 130W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA