650V,Drain to Source Voltage (Vdss)
11W,Power - Max
4 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
2N7638-GA GENESIC SEMICONDUCTOR INC
Silicon Carbide, Normally Off 650V 8A (Tc) (158°C) 170 mOhm @ 8A - - 720pF @ 35V 11W Surface Mount TO-276AA
SPU01N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 800mA (Tc) 6 Ohm @ 500mA, 10V 3.9V @ 250µA 5nC @ 10V 100pF @ 25V 11W Through Hole TO-251-3 Long Leads, IPak, TO-251AB
SPS01N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 800mA (Tc) 6 Ohm @ 500mA, 10V 3.9V @ 250µA 5nC @ 10V 100pF @ 25V 11W Through Hole TO-251-3 Short Leads, IPak, TO-251AA
SPD01N60C3 INFINEON TECHNOLOGIES AG
MOSFET N-Channel, Metal Oxide 650V 800mA (Tc) 6 Ohm @ 500mA, 10V 3.9V @ 250µA 5nC @ 10V 100pF @ 25V 11W Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63