650V,Drain to Source Voltage (Vdss)
1300pF @ 300V,Input Capacitance (Ciss) @ Vds
6 parts found
Part Numbers Manufacturer Name Datasheet FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) @ Vgs Input Capacitance (Ciss) @ Vds Power - Max Mounting Type Package / Case
TK14A65W,S5X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) 250 mOhm @ 6.9A, 10V 3.5V @ 690µA 35nC @ 10V 1300pF @ 300V 40W Surface Mount TO-220-3 Full Pack
TK14E65W,S1X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) 250 mOhm @ 6.9A, 10V 3.5V @ 690µA 35nC @ 10V 1300pF @ 300V 130W Through Hole TO-220-3
TK14N65W,S1F TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) 250 mOhm @ 6.9A, 10V 3.5V @ 690µA 35nC @ 10V 1300pF @ 300V 130W Through Hole TO-247-3
TK14A65W5,S5X TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) 300 mOhm @ 6.9A, 10V 4.5V @ 690µA 40nC @ 10V 1300pF @ 300V 40W Through Hole TO-220-3 Full Pack
TK14C65W,S1Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) 250 mOhm @ 6.9A, 10V 3.5V @ 690µA 35nC @ 10V 1300pF @ 300V 130W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA
TK14C65W5,S1Q TOSHIBA CORP
MOSFET N-Channel, Metal Oxide 650V 13.7A (Ta) - - 40nC @ 10V 1300pF @ 300V 130W Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA